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| symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 24 30 53 64 r jc 2.4 3.5 2 w t a =70c 1.2 w junction and storage temperature range a p d c 4321 -55 to 175 t c =100c i d continuous draincurrent b maximum units parameter t c =25c t c =100c 30 maximum junction-to-ambient a steady-state 4633 120 avalanche current c 30 power dissipation a t a =25c p dsm c/w absolute maximum ratings t a =25c unless otherwise noted vv 12 pulsed drain current power dissipation b t c =25c gate-source voltage drain-source voltagemaximum junction-to-case c steady-state c/w thermal characteristicsparameter units maximum junction-to-ambient a t 10s r ja c/w a repetitive avalanche energy l=0.3mh c 135 mj a t a =70c 8 continuous draincurrent h t a =25c i dsm 10 AOL1426n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 46a (v gs = 10v) r ds(on) < 10.5m (v gs = 10v) r ds(on) < 13.5m (v gs = 4.5v) uis testedrg,ciss,coss,crss tested general description the AOL1426 uses advanced trench technology toprovide excellent r ds(on) , low gate charge.this device is suitable for use as a high side switch in smps andgeneral purpose applications. -rohs compliant -halogen and antimony free green device* ultra so-8 tm top view bottom tabconnected to drain s g d ds g alpha & omega semiconductor, ltd. www.aosmd.com
"#$%& + 9 1: 9;<: 8 8 & $ @ ** '@ ** '@ #** 8 '@ $ b $ 9: 8 b $ 9: b $* b $" 9 : * # * 9 ??: * ? 8 * ## * b ## 7 (;> 7 + < < < b>6@ @; 7 ;<> c ((6 ;< ; > 6 ;(;< < < 6@ >((; ; d <; > 7;e ; ; <; > ;@ >7 ((6 ;< ; > ;@ (;> ; 7 7 ; (; (;> < @>< ;< < 6+6 d 7;> <; ! % #! 1!#$% ?7f 12 32', )) !0 ! % 1!#$% ! % # % 1!#$% ! % #%* * ! % ?7f !0 ! % 1!#$% # ); *% &% # );?? %0!. &% 6 < # );?? @!00 &% # ); %0!. &% & !, && + ".) "% * ##% ' !'! ! % ; ' !'! ! % -4' 2 )) 9;<: ! #! ) # % ; )%* * ! % @ #2!#" #! * " ! % "% @ #2!#" 0 !$% ! % 1#%*1 0" 0 !$% 4 e%# ! % 0 !$% #! ##% ! %)+ ". 0%!g!$% ##% )! ! ! !5 6 7 2 )) + ". "% %/%#*% % /%#. &% + ". "% %/%#*% % /%#. 1!#$% @ "3" 3 * #! ) # % +#%!g" 2 0 !$% ; * ! % "#! ##% %/%#*% #! *?%# !'! ! % @ "3" 3 * h 1% /!0% ? i * &%!*#%" 2 1 1% "%/ % ! * 00 ! # % / # &% 2 1 + 1% ' 2%# " ** '! ( * -!*%" 9j: * $ k ) ) !*% 1%#&!0 #%* * ! % ! " * & #% *%?0 *% $ 1% ''%# " ** '! 0 & ? # !*%* 21%#% !"" !0 1%! * g $ * *%" h %'% /% #! $ '0*% 2 " 1 0 & %" -. k %&'%#! #% 9j: 1% i * 1% *& ? 1% 1%#&!0 &'%"% % ?# & k !*% i ! " !*% !&- % 1% * ! 1!#! %# * * @ $#%* !#% - ! %" * $ = * '0*%* " . . 0% l &!, @ 1%*% #/%* !#% -!*%" 1% k ) ) !*% 1%#&!0 &'%"% % 21 1 * &%!*#%" 2 1 1% "%/ % & %" ! 0!#$% 1%! * g !**& $ ! &!, && k %&'%#! #% ? 9j: 1%*% %* * !#% '%#? #&%" 2 1 1% "%/ % & %" @) - !#" 2 1 f ''%# ! * 00 ! # % / # &% 2 1 1% ; #/% '# / "%* ! * $0% '0*% #! $ 7 #?! % & %" ! @) - !#" 2 1 f ''%# a 1 * "%/ % * $!#! %%" $#%% !? %# "! % "% 8( 9 % 8: rev5: dec 2008 ." ! !/# 0 0 0! AOL1426 typical electrical and thermal characteristics 0 30 60 90 120 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) 10v 4.5v v gs =3.5v 6v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 5 7 9 11 13 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 30 60 90 120 150 180 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =20a v gs =10v v gs =4.5 5 10 15 20 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125 v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com AOL1426 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ? ja normalized transient thermal resistance c oss c rss 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1m 0.1 dc r ds(on) limited t j(max) =175c t c =25c 100 v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =3.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max ) =175c t c =25c alpha & omega semiconductor, ltd. www.aosmd.com AOL1426 typical electrical and thermal characteristics 0 20 40 60 0.00001 0.0001 0.001 0.01 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 50 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c 0 20 40 60 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note g) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note g) z ? ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =64c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse alpha & omega semiconductor, ltd. www.aosmd.com AOL1426 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar alpha & omega semiconductor, ltd. www.aosmd.com |
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